008 |
|
210820s1986 nyua b 001 0 eng |
010 |
|
|a85005408 //r90
|
020 |
|
|a2881241093 |q(hbk.) : |cGIFT
|
040 |
|
|aDLC|beng|dTWNTU
|
049 |
|
|aASIP
|
050 |
00
|
|aQC611.6.D4|bD418 1986
|
082 |
00
|
|a537.622|bP197
|
095 |
|
|aNLB|bA9 |cH006473|d537.622|eP197|pBOOK|tDDC
|
100 |
|
|aPantelides,Sokrates T.
|
245 |
00
|
|aDeep centers in semiconductors :|ba state of the art approach /|cedited by Sokrates T. Pantelides
|
246 |
|
|aa state of the art approach
|
260 |
|
|aNew York :|bGordon and Breach,|c1986
|
300 |
|
|axi, 777 p. :|bill. ;|c24 cm
|
504 |
|
|aIncludes bibliographies and index
|
650 |
0
|
|aSemiconductors|xDefects
|
650 |
0
|
|aElectron donor-acceptor complexes
|
650 |
0
|
|aImpurity centers
|
700 |
10
|
|aPantelides, Sokrates T
|