008 |
|
210820s1981 nyua f b 001 0 eng d |
010 |
|
|a81005354|b62
|
020 |
|
|a0387105182|q(vol.1 ; |qhbk.) : |cGIFT
|
020 |
|
|a0387115153|q(vol.2 ; |qhbk.) : |cGIFT
|
040 |
|
|aDLC|beng|dTWNTU
|
050 |
0
|
|aQC611.6.D4|bL36
|
082 |
04
|
|a537.622|bL292
|
095 |
|
|aNLB|bA9 |cH006460|d537.622|eL292|lv.1|pBOOK|tDDC
|
100 |
1
|
|aLannoo, M.
|
245 |
10
|
|aPoint Defects in Semiconductors /|nI~II|cby M. Lannoo, J. Bourgoin
|
260 |
0
|
|aNew York :|bSpringer-Verlag,|c1981-1983
|
300 |
|
|a265 vol. :|bill. ;|c24 cm
|
440 |
0
|
|aSpringer series in solid-state sciences ;|v22, 35
|
500 |
|
|aVol. 2 by J. Bourgoin, M. Lannoo, with a foreword by G.D. Watkins
|
504 |
|
|aIncludes bibliographical references and index
|
505 |
0
|
|g1. |tTheoretical aspects --|rby M. Lannoo
|
505 |
0
|
|g2. |tExperimental aspects|rby J. Bourgoin
|
650 |
0
|
|aSemiconductors|xDefects
|
650 |
0
|
|aPoint defects
|
700 |
10
|
|aBourgoin, J.
|